Generating intense electric fields in 2D materials by dual ionic gating
oleh: Benjamin I. Weintrub, Yu-Ling Hsieh, Sviatoslav Kovalchuk, Jan N. Kirchhof, Kyrylo Greben, Kirill I. Bolotin
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2022-11-01 |
Deskripsi
The application of electric fields >1 V/nm in solid state devices could provide access to unexplored phenomena, but it is currently difficult to implement. Here, the authors develop a double-sided ionic liquid gating technique to generate electric fields as large as 4 V/nm across few-layer WSe2, leading to field-induced semiconductor-to-metal transitions.