Find in Library

Diamond-based Schottky barrier diodes (SBDs) are involved in many technological applications. In a conventional SBD fabrication process that involves interface carbide forming ohmic contacts, a post-annealing step is necessary for ohmic contacts to achieve their operational efficiency. However, this step deteriorates the essential oxygen coverage at the diamond surface which in turn affects SBDs uniformity. So, an additional oxygen termination step is necessary prior to Schottky metal deposition. In this study, a non-conventional fabrication method is introduced using corrosion-resistant nanocarbon ohmic contacts fabricated by coaxial arc plasma deposition. As a result, The SBD parameters including ideality factors and barrier heights exhibited high uniformity with a very small standard deviation for the proposed fabrication process flow when compared with process flow including a post-annealing step. Furthermore, the contact behavior of nanocarbon ohmic electrodes is investigated on a heavily boron-doped diamond film using circular transmission line model theory and a specific contact resistance of ∼10 ^−5 Ωcm ^2 is obtained, suggesting the practical application of nanocarbon ohmic contacts for diamond-based electronic devices.