Effect of Growth Temperature on the Characteristics of CsPbI<sub>3</sub>-Quantum Dots Doped Perovskite Film
oleh: Shui-Yang Lien, Yu-Hao Chen, Wen-Ray Chen, Chuan-Hsi Liu, Chien-Jung Huang
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2021-07-01 |
Deskripsi
In this study, adding CsPbI<sub>3</sub> quantum dots to organic perovskite methylamine lead triiodide (CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI<sub>3</sub> quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.