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In the present study DLC:SiO_x/DLC/DLC:SiO_x/nSi and DLC:SiO_x/DLC/DLC:SiO_x/pSi structures were fabricated by ion beam deposition using a closed drift ion source. Current-voltage (I-V) characteristics of the multilayer samples were measured at room temperature. The main charge transfer mechanisms were considered. Unstable negative resistance effect was observed for some DLC:SiO_x/DLC/DLC:SiO_x/nSi and DLC:SiO_x/DLC/DLC:SiO_x/pSi structures. In the case of the diamond like carbon superlattices fabricated on <em>n</em>Si it was observed only during the first measurement. In the case of the some DLC:SiO_x/DLC/DLC:SiO_x/pSi negative resistance "withstood" several measurements. Changes of the charge carrier mechanisms were observed along with the dissapear of the negative resistance peaks. It seems, that in such a case influence of the bulk related charge transfer mechanisms such as Poole-Frenkel emission increased, while the influence of the contact limited charge transfer mechanisms such as Schottky emission decreased. Observed results were be explained by current flow through the local microconducting channels and subsequent destruction of the localized current pathways as a result of the heating by flowing electric current.<p><a href="http://dx.doi.org/10.5755/j01.ms.17.1.240">http://dx.doi.org/10.5755/j01.ms.17.1.240</a></p>