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Effect of X-Ray on the properties of AlGaAs semiconductor Laser
oleh: Wlla Mahfooth Mohammed Ameen, Sabri Jasem Mohammed
Format: | Article |
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Diterbitkan: | University of Kirkuk 2010-06-01 |
Deskripsi
In this research effect caused by X-Ray on the properties of AlGaAs laser has been carried auto at different times ,there properties include the I-V and I-P at 180oC. It is noted that these properties has change when the laser is exposed to X-ray radiation also the stimulated emission is completely eliminated at moderate exposure times, but at longer exposure times (45-90)min the laser break down and both stimulated and spontaneous emission were completely disappear. Creased with the disappearing of each at the catalytic spontaneous resurrections.