Interlayer excitons in a bulk van der Waals semiconductor
oleh: Ashish Arora, Matthias Drüppel, Robert Schmidt, Thorsten Deilmann, Robert Schneider, Maciej R. Molas, Philipp Marauhn, Steffen Michaelis de Vasconcellos, Marek Potemski, Michael Rohlfing, Rudolf Bratschitsch
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2017-09-01 |
Deskripsi
Excitons, quasi-particles of bound electron-hole pairs, are at the core of the optoelectronic properties of layered transition metal dichalcogenides. Here, the authors unveil the presence of interlayer excitons in bulk van der Waals semiconductors, arising from strong localization and spin-valley coupling of charge carriers.