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High-fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error-correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS four-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin-flip errors, favoring the use of the technique at short integration times. This method not only allows for faster and higher-fidelity qubit measurements but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits.