Process integration and future outlook of 2D transistors
oleh: Kevin P. O’Brien, Carl H. Naylor, Chelsey Dorow, Kirby Maxey, Ashish Verma Penumatcha, Andrey Vyatskikh, Ting Zhong, Ande Kitamura, Sudarat Lee, Carly Rogan, Wouter Mortelmans, Mahmut Sami Kavrik, Rachel Steinhardt, Pratyush Buragohain, Sourav Dutta, Tristan Tronic, Scott Clendenning, Paul Fischer, Ernisse S. Putna, Marko Radosavljevic, Matt Metz, Uygar Avci
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2023-10-01 |
Deskripsi
The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent progress in the fabrication of complementary metal-oxide-semiconductor (CMOS) devices based on stacked 2D TMD nanoribbons and specifically highlight issues that still need to be resolved by the 2D community in five crucial research areas: contacts, channel growth, gate oxide, variability, and doping. While 2D TMD transistors have great potential, more research is needed to understand the physical interactions of 2D materials at the atomic scale.