Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover
oleh: Algirdas SUŽIEDĖLIS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Viktorija NARGELIENĖ, Aurimas ČERŠKUS, Andžej LUČUN, Tomas ANBINDERIS, Irina PAPSUJEVA, Aleksandras NARKŪNAS, Benas KUNDROTAS, Roma RINKEVIČIENĖ
| Format: | Article |
|---|---|
| Diterbitkan: | Kaunas University of Technology 2014-06-01 |
Deskripsi
In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al<sub>0.25</sub>Ga<sub>0.75</sub>As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunction diode placed in a microwave electric field. Different temperature dependences of the detected voltage for different types of microwave diodes fabricated on the base of GaAs/Al<sub>0.25</sub>Ga<sub>0.75</sub>As heterostructures have been measured. <p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.20.2.6319">http://dx.doi.org/10.5755/j01.ms.20.2.6319</a></p>