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BackgroundRadiation sensitive field-effect transistors (RADFETs) are calibrated on the ground using a 60Co γ-ray source that is different from the proton-electron radiation environment that exists in actual space applications.PurposeThis study aims to explore the influence of space protons on the radiation response of RADFETs.MethodsFirst of all, the comparative and combinative radiation experiments with 10 MeV proton and 60Co γ radiation were carried out. Then, the oxide-trap charge and interface-trap charge were separated by mid-gap technique (MGT) and charge pump (CP) method, and the generation process of proton primary knock-on atom (PKA) in oxide was simulated by Geant4 toolkit. Finally, the microscopic mechanism of RADFETs radiation response difference between proton and 60Co γ was investigated.ResultsThe results show that dose response of RADFETs to proton is insensitive in comparison with γ-ray, proton irradiation introduces certain displacement damage in RADFETs which will intensify the influence of trap charge near the interface on the measurement results.ConclusionsIt is necessary to use the proton and electron flux model to modify the measured data or carry out a specific calibration scheme for the RADFETs applied to space.