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In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm₂O₃ and V₂O₅ films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (R_HRS/R_LRS) ratio of the RRAM device containing a V₂O₅/Sm₂O₃ bilayer is one order of magnitude higher than that of the devices containing a single layer of V₂O₅ or Sm₂O₃. We also found that the stacking sequence of the Sm₂O₃ and V₂O₅ films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.