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In the process of preparing higher manganese silicide (HMS) by magnetron sputtering method, the sputtering base pressure is often a neglected parameter, manganese oxidation is a very difficult problem to avoid. Based on these situations, this paper takes sputtering base pressure as a variable and uses naturally oxidized manganese target as raw material to prepare samples with optimal experimental parameters of HMS, studied the impact of manganese oxidation on the preparation of HMS. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize and analyze the obtained films. It is found that Mn _3 O _4 could be well prepared by MnO and MnO _2 on silicon substrate by the same preparation technology to prepare HMS, while control the base pressure higher than 7 × 10 ^−5 Pa. The MnO existence will not cause a negative impact to the production of HMS, but MnO _2 should be avoided in any process. When MnO and MnO _2 exist at the same time, the sputtering base pressure range of 4 × 10 ^−3 –8 × 10 ^−4 Pa should be avoided. The base pressure additionally has a strong regulate effect on the grain size of Mn _3 O _4 .