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Light-trapping nanostructures have been widely used for improving solar cells’ performance, but the higher surface recombination and poor electrode contact introduced need to be addressed. In this work, silicon nanostructures were synthesized via silver-catalyzed etching to texturize solar cells. Atomic-layer-deposited Al₂O₃ passivated the nanotextured cells. A surface recombination velocity of 126 cm/s was obtained, much lower than the 228 cm/s of the SiN_X-passivated one. Additionally, the open-circuit voltage (V_OC) of the nanotextured cells improved significantly from 582 to 610 mV, as did the short-circuit current (J_SC) from 25.5 to 31 mA/cm². Furthermore, the electrode contact property was enhanced by light-induced plating. A best efficiency of 13.3% for nano-textured cells was obtained, which is higher than the planar cell’s 12%.