High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm<sup>2</sup> Power Density at 94 GHz
oleh: Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Ralf Fluckiger, Diego Marti, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2022-01-01 |
Deskripsi
We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm<sup>2</sup> InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in the common-emitter (CE) and common-base (CB) configurations. Both configurations were implemented side-by-side on either 20-nm-thick graded GaAsSb- or GaInAsSb-base layers. A measured record saturated output power <italic>P</italic><sub>OUT,SAT</sub> = 14.5 dBm with a corresponding power density 10.4 mW/μm<sup>2</sup> were achieved in the GaInAsSb-base CB configuration. The performance follows from <italic>i</italic>) the higher power gain in the CB topology and, <italic>ii</italic>) the superior <italic>BV</italic><sub>CEO</sub> and <italic>BV</italic><sub>CBO</sub> breakdown voltages obtained with the quaternary base which allow degradation-free operation at higher voltages. Load-pull contours show a combination of high output power and power gain in the proximity of 50 Ω for a wide range of load impedances. In contrast, CB InP/GaAsSb DHBTs deliver <italic>P</italic><sub>OUT,SAT</sub> = 10.6 dBm and 4.3 mW/μm<sup>2</sup>. For all devices considered here, CB operation improves transistor robustness against high-power device degradation. The present work provides the first report on the power performance of quaternary InP/GaInAsSb DHBTs in CE/CB topologies, with comparison to ternary InP/GaAsSb DHBTs.