Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor
oleh: Rifki Amiruddin, Budi Syihabuddin, Yuyu Wahyu
| Format: | Article |
|---|---|
| Diterbitkan: | LPPM Institut Teknologi Telkom Purwokerto 2018-02-01 |
Deskripsi
The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 �¢?? 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB.