Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity
oleh: Sk Ziaur Rahaman, I-Jung Wang, Ding-Yeong Wang, Chi-Feng Pai, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, Yao-Jen Chang, Yi-Ching Kuo, Yi-Hui Su, Guan-Long Chen, Fang-Ming Chen, Jeng-Hua Wei, Tuo-Hung Hou, Shyh-Shyuan Sheu, Chih-I Wu, Duan-Lee Deng
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2020-01-01 |
Deskripsi
We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor (<inline-formula> <tex-math notation="LaTeX">${\Delta }$ </tex-math></inline-formula>) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology.