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We used capacitance–voltage (<i>C</i>–<i>V</i>), conductance–voltage (<i>G</i>–<i>V</i>), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 × 10¹³ eV⁻¹∙cm⁻² at 1 kHz to 1.2 × 10¹¹ eV⁻¹∙cm⁻² at 1 MHz. The power spectral density exhibits 1/<i>f</i>-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/<i>f</i>-noise features. At lower frequencies, the device exhibits 1/<i>f</i>-noise behavior, while beyond 1 kHz, it exhibits 1/<i>f</i>²-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/<i>f</i>²-noise features moves to the subordinated frequency (~10² Hz) side.