Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

oleh: Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun

Format: Article
Diterbitkan: AIP Publishing LLC 2021-11-01

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