SiGe HBT Technology Based on a 0.13-<inline-formula> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> Process Featuring an <inline-formula> <tex-math notation="TeX">${f}_{\rm MAX}$ </tex-math></inline-formula> of 325 GHz
oleh: Takashi Hashimoto, Kazuaki Tokunaga, Keiko Fukumoto, Yoshinori Yoshida, Hidenori Satoh, Maki Kubo, Akio Shima, Katsuya Oda
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2014-01-01 |
Deskripsi
A self-aligned SiGe HBT technology achieving a cutoff frequency (f<sub>T</sub>) of 253 GHz was developed using a selective SiGe epitaxial growth process. Germanium concentration in an i-SiGe layer just under a p<sup>+</sup> intrinsic base region was raised to 27.4% to improve f<sub>T</sub>, and boron concentration in the intrinsic base region reached 2.4 × 10<sup>20</sup> cm<sup>-3</sup> as a deposition to maintain a breakdown voltage of 1.5 V. A 0.13-μm SiGe BiCMOS technology geometrically advanced from an earlier 0.18-μm version shrinks the emitter width from 0.2 to 0.12 μm to reduce collector-base capacitance and base resistance. It achieves a maximum oscillation frequency (f<sub>MAX</sub>) of 325 GHz. This technology can be applied to optical and mm wave communication systems.