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A recrystallization technology that is required for implementing Ge devices in the semiconductor back-end-of-line (BEOL) processing at temperatures below 450 °C is presented. A new seed-induced crystallization (SIC) is applied to the fabrication of polycrystalline Ge (poly-Ge) thin films at 400 °C. While the process successfully achieved the crystalline fraction greater than 90% in Ge, it overcomes the problem of metal contamination in traditional metal-induced crystallization (MIC) technology by reducing the metal contamination to the levels below the detection limit of X-ray photoelectron spectroscopy (XPS).