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Electron overflow is one of the key factors that limit the quantum efficiency for AlGaN-based deep-ultraviolet light-emitting diodes. In this work, we report a numerical study to improve the electron injection efficiency by manipulating the electric field profiles via doping the n-Al0.60Ga0.40N electron source layer with different concentrations and reveal the physical mechanism of the Si doping effect on the electron and the hole injection. By utilizing the appropriate doping concentration, the electric field will reduce the electron drift velocity and, thus, the mean free path. Therefore, a higher electron capture efficiency by the multiple quantum wells (MQWs) and an increase of the hole concentration in the active region can be realized, resulting in an improved radiative recombination rate and an optical output power.