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The gas-sensitive properties of thin films of β-Ga₂O₃ deposited via RF magnetron sputtering while heating the substrate to 650 °C were studied. Some of the samples were subjected to additional high-temperature annealing at a temperature of 900 °C. As a result, for samples subjected to additional annealing, the response when exposed to 1% H₂ increased by five once sensitivity to hydrogen-containing gases appeared. These samples are also characterized by good long-term stability compared to samples without high-temperature annealing. The improvement in gas-sensitive characteristics is explained by a decrease in oxygen vacancies and a decrease in current density by four orders of magnitude.