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We propose new a Si-based waveguided Superlattice-on-Insulator (SLOI) platforms for high-performance electro-optical (EO) 2 × 2 and N × M switching and 1 × 1 modulation, including broad spectrum and resonant. We present a theoretical investigation based on the tight-binding Hamiltonian of the Pockels EO effect in the lattice-matched undoped <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mrow><mo>(</mo><mrow><mi>GaP</mi></mrow><mo>)</mo></mrow></mrow><mi>N</mi></msub><mo>/</mo><msub><mrow><mrow><mo>(</mo><mrow><msub><mrow><mi>Si</mi></mrow><mn>2</mn></msub></mrow><mo>)</mo></mrow></mrow><mi>M</mi></msub></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mrow><mo>(</mo><mrow><mi>AlP</mi></mrow><mo>)</mo></mrow></mrow><mi>N</mi></msub><mo>/</mo><msub><mrow><mrow><mo>(</mo><mrow><msub><mrow><mi>Si</mi></mrow><mn>2</mn></msub></mrow><mo>)</mo></mrow></mrow><mi>M</mi></msub></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mrow><mo>(</mo><mrow><mi>ZnS</mi></mrow><mo>)</mo></mrow></mrow><mi>N</mi></msub><mo>/</mo><msub><mrow><mrow><mo>(</mo><mrow><msub><mrow><mi>Si</mi></mrow><mn>2</mn></msub></mrow><mo>)</mo></mrow></mrow><mi>M</mi></msub></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mrow><mo>(</mo><mrow><mi>AlN</mi></mrow><mo>)</mo></mrow></mrow><mi>N</mi></msub><mo>/</mo><msub><mrow><mrow><mo>(</mo><mrow><mn>3</mn><mi mathvariant="normal">C</mi><mo>−</mo><mi>SiC</mi></mrow><mo>)</mo></mrow></mrow><mi>M</mi></msub></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mrow><mo>(</mo><mrow><mi>GaAs</mi></mrow><mo>)</mo></mrow></mrow><mi>N</mi></msub><mo>/</mo><msub><mrow><mrow><mo>(</mo><mrow><msub><mrow><mi>Ge</mi></mrow><mn>2</mn></msub></mrow><mo>)</mo></mrow></mrow><mi>M</mi></msub></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mrow><mo>(</mo><mrow><mi>ZnSe</mi></mrow><mo>)</mo></mrow></mrow><mi>N</mi></msub><mo>/</mo><msub><mrow><mrow><mo>(</mo><mrow><mi>GaAs</mi></mrow><mo>)</mo></mrow></mrow><mi>M</mi></msub></mrow></semantics></math></inline-formula>, and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mrow><mo>(</mo><mrow><mi>ZnSe</mi></mrow><mo>)</mo></mrow></mrow><mi>N</mi></msub><mo>/</mo><msub><mrow><mrow><mo>(</mo><mrow><msub><mrow><mi>Ge</mi></mrow><mn>2</mn></msub></mrow><mo>)</mo></mrow></mrow><mi>M</mi></msub></mrow></semantics></math></inline-formula> wafer-scale short-period superlattices that are etched into waveguided networks of small-footprint Mach-Zehnder interferometers and micro-ring resonators to yield opto-electronic chips. The spectra of the Pockels <b>r₃₃</b> coefficient have been simulated as a function of the number of the atomic monolayers for “non-relaxed” heterointerfaces. The large obtained <b>r₃₃</b> values enable the SLOI circuit platforms to offer a very favorable combination of monolithic construction, cost-effective manufacturability, high modulation/switching speed, high information bandwidth, tiny footprint, low energy per bit, low switching voltage, near-IR-and-telecom wavelength coverage, and push-pull operation. By optimizing waveguide, clad, and electrode dimensions, we obtained very desirable values of the <i>V_πL</i> performance metric, in the range of 0.062 to 0.275 V·cm, portending a bright future for a variety of applications, such as sensor networks or Internet of Things (IoT).