Multi-Level Cell Properties of a Bilayer Cu<sub>2</sub>O/Al<sub>2</sub>O<sub>3</sub> Resistive Switching Device
oleh: Jonas Deuermeier, Asal Kiazadeh, Andreas Klein, Rodrigo Martins, Elvira Fortunato
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2019-02-01 |
Deskripsi
Multi-level resistive switching characteristics of a Cu<sub>2</sub>O/Al<sub>2</sub>O<sub>3</sub> bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.