Multi-Level Cell Properties of a Bilayer Cu<sub>2</sub>O/Al<sub>2</sub>O<sub>3</sub> Resistive Switching Device

oleh: Jonas Deuermeier, Asal Kiazadeh, Andreas Klein, Rodrigo Martins, Elvira Fortunato

Format: Article
Diterbitkan: MDPI AG 2019-02-01

Deskripsi

Multi-level resistive switching characteristics of a Cu<sub>2</sub>O/Al<sub>2</sub>O<sub>3</sub> bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide&#8212;an unusual property for an oxide semiconductor&#8212;are discussed for the first time regarding their role in the resistive switching mechanism.