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In this paper, we construct a new model based on the coupling of thermoelasticity, plasma, and microelongation effect under volumetric absorption of laser pulse. Three different thermoelasticity theories are applied to construct the new model in a 2D thermoelastic semiconducting medium whose properties are temperature-dependent. The medium surface is exposed to laser radiation having spatial and temporal Gaussian distributions; in addition, the surface is considered traction-free. The general solutions were obtained analytically via Laplace and Fourier transformations; for Laplace inverse, we use the well-known Riemann sum approximation. As an application and consistency validation, silicon material is used.