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In this paper, a data processing method is employed to improve the uniqueness of the electronic transport parameters (the carrier lifetime, carrier diffusion coefficient, and front and rear surface recombination velocities) obtained from fitting free carrier absorption data of silicon wafers. By employing the mean square variance graph or map, the influence of initial values on multi-parameter estimation greatly decreases. Theoretical simulations are performed to investigate the dependence of the uniqueness of the estimated parameters on the number of free parameters by choosing different initial values during multi-parameter fitting. Simulation and experimental results show that the proposed method can significantly improve the uniqueness of the fitted electronic transport parameters.