Excited-state spin-resonance spectroscopy of V $${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ B − defect centers in hexagonal boron nitride

oleh: Nikhil Mathur, Arunabh Mukherjee, Xingyu Gao, Jialun Luo, Brendan A. McCullian, Tongcang Li, A. Nick Vamivakas, Gregory D. Fuchs

Format: Article
Diterbitkan: Nature Portfolio 2022-06-01

Deskripsi

The negatively charged boron vacancy in hBN shows promise as a quantum sensor, but, until recently, the focus has been on its ground-state properties. Here, the authors report temperature-dependent spin-resonance optical spectroscopy of the orbital excited state.