Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
oleh: You-Chen Weng, Ming-Yao Hsiao, Chun-Hsiung Lin, Yu-Pin Lan, Edward-Yi Chang
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2023-04-01 |
Deskripsi
A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum I<sub>D</sub> and G<sub>m</sub> (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.