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Heterostructure films of the form n-Si/Si(tSi)/Fe(800 Å) were prepared by DC magnetron sputtering. In these films, the Si and Fe (800 Å) films were deposited onto n-Si(100) substrates. Substrates with different doping concentration ND were used. The thickness tSi of the interleaved Si layer is varied. For tSi = 0, the heterostructures form n-Si/Fe Schottky junctions. Structural studies on the samples as performed through XRD indicate the polycrystalline nature of the films. The magnetization data showed that the samples have in-plane easy axis of magnetization. The coercivity of the samples is of the order of 90 Oe. The I-V measurements on the samples showed nonlinear behavior. The diode ideality factor η = 2.6 is observed for the junction with ND = 1018 cm-3. The leakage current I0 increases with the increase of ND. Magnetic field has less effect on the electrical properties of the junctions. A positive magnetoresistance in the range 1 – 10 % was observed for the Si/Fe Schottky junctions in the presence of magnetic field of strength 2 T. The origin of the MR is analyzed using a model where the ratio of the currents across the junctions with and without the applied magnetic field, IH=2T/IH=0 is studied as a function of the bias voltage Vbias. The ratio IH=2T/IH=0 shows a decreasing trend with the Vbias, suggesting that the contribution to the MR in our n-Si/Fe Schottky junctions due to the spin dependent scattering is very less as compared to that due to the suppression of the impact ionization process.