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The resistance and the surface morphology of the graphene films were studied after atomic oxygen exposure. The graphene films can be etched away during atomic oxygen exposure, the resistance of graphene films decreases at first and then increases. It shows that the adsorption of oxygen atom may play an important role in the change of the resistance of graphene films at the beginning of the exposure and then the change of the resistance conforms to the law of resistance. The atomic oxygen erosion rate which is about 1.2×10^-25cm³/atom to 1.3×10^-25cm³/atom can be obtained. A kind of new atomic oxygen detector was put forward based on the relationship between the resistance of graphene films and atomic oxygen fluence.