Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length
oleh: Seunguk Song, Aram Yoon, Jong-Kwon Ha, Jihoon Yang, Sora Jang, Chloe Leblanc, Jaewon Wang, Yeoseon Sim, Deep Jariwala, Seung Kyu Min, Zonghoon Lee, Soon-Yong Kwon
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2022-08-01 |
Deskripsi
Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate monolayer MoS2-PtTe2 heterojunction arrays with sub-1-nm transfer length and enhanced carrier injection compared to vertical 3D metallic contacts.