Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO<sub>3</sub>/Al/SrZrTiO<sub>3</sub>/ITO with Embedded Al Layer
oleh: Ke-Jing Lee, Wei-Shao Lin, Li-Wen Wang, Hsin-Ni Lin, Yeong-Her Wang
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2022-12-01 |
Deskripsi
The SrZrTiO<sub>3</sub> (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 10<sup>7</sup>, lower operation voltage (V<sub>SET</sub> = −0.8 V and V<sub>RESET</sub> = 2.05 V), uniform film, and device stability of more than 10<sup>5</sup> s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed.