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This paper presents an all-dielectric, cascaded, multilayered, thin-film filter, allowing near-infrared filtration for spectral imaging applications. The proposed design is comprised of only eight layers of amorphous silicon (A-Si) and silicon nitride (Si<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>N<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>4</mn></msub></semantics></math></inline-formula>), successively deposited on a glass substrate. The finite difference time domain (FDTD) simulation results demonstrate a distinct peak in the near-infrared (NIR) region with transmission efficiency up to 70% and a full-width-at-half-maximum (FWHM) of 77 nm. The theoretical results are angle-insensitive up to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mn>60</mn><mo>°</mo></msup></semantics></math></inline-formula> and show polarization insensitivity in the transverse magnetic (TM) and transverse electric (TE) modes. The theoretical response, obtained with the help of spectroscopic ellipsometry (SE), is in good agreement with the experimental result. Likewise, the experimental results for polarization insensitivity and angle invariance of the thin films are in unison with the theoretical results, having an angle invariance up to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mn>50</mn><mo>°</mo></msup></semantics></math></inline-formula>.