Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors
oleh: Chung-I. Yang, Ting-Chang Chang, Po-Yung Liao, Li-Hui Chen, Bo-Wei Chen, Wu-Ching Chou, Guan-Fu Chen, Sung-Chun Lin, Cheng-Yen Yeh, Cheng-Ming Tsai, Ming-Chang Yu, Shengdong Zhang
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2018-01-01 |
Deskripsi
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The V<sub>th</sub> is found to shift negatively when increasing the I<sub>D</sub>-V<sub>G</sub> measurement condition V<sub>D</sub> from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length (L<sub>eff</sub>) being shorter than the mask channel length (L). Using the transmission line method to extract L<sub>eff</sub>, we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.