Bridging the gap between atomically thin semiconductors and metal leads

oleh: Xiangbin Cai, Zefei Wu, Xu Han, Yong Chen, Shuigang Xu, Jiangxiazi Lin, Tianyi Han, Pingge He, Xuemeng Feng, Liheng An, Run Shi, Jingwei Wang, Zhehan Ying, Yuan Cai, Mengyuan Hua, Junwei Liu, Ding Pan, Chun Cheng, Ning Wang

Format: Article
Diterbitkan: Nature Portfolio 2022-04-01

Deskripsi

Barrier-free metal-semiconductor interfaces are crucial to improve the performance of 2D electronic devices. Here, the authors report a strategy to induce local bonding distortion in 2D transition metal dichalcogenides via soft oxygen plasma treatments, leading to reduced contact resistance and improved transport properties.