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UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors
oleh: Manuel Bastuck, Donatella Puglisi, Anita Lloyd Spetz, Andreas Schütze, Tilman Sauerwald, Mike Andersson
Format: | Article |
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Diterbitkan: | MDPI AG 2018-12-01 |
Deskripsi
Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.