Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

oleh: Roman I. Romanov, Maxim G. Kozodaev, Anna G. Chernikova, Ivan V. Zabrosaev, Anastasia A. Chouprik, Sergey S. Zarubin, Sergey M. Novikov, Valentyn S. Volkov, Andrey M. Markeev

Format: Article
Diterbitkan: American Chemical Society 2021-12-01

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