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We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm ^2 V ^−1 s ^−1 at 150 K and reduces to 33 cm ^2 V ^−1 s ^−1 at 340 K, when the voltage gate sweep range is $\pm \,$ 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.