Find in Library

PtSe _2 has high carrier mobility, excellent electrical and optical properties, and high potential in the field of optoelectronic devices. In this paper, the conventional selenization method is optimized and a single-temperature zone preparation is used to prepare large-area and homogeneous PtSe _2 thin-film materials on sapphire substrates in a shorter time and at a lower temperature. The prepared sample is characterized by optical microscopy, atomic force microscopy, Raman spectroscopy and Z-scan method. The saturable absorption properties of layered PtSe _2 as a passive Q-switched are investigated in a solid-state laser. The results show that the PtSe _2 thin film material is synthesized at 400 °C for 1 h to cover the entire one-inch sapphire wafer with a thickness of about 25 nm and the surface roughness is 13.1 nm. The modulation at 1064 nm yielded an output pulse with a maximum repetition frequency of 688.47 kHz, corresponding to a pulse width of 202.5 ns, a peak power of 7.35 W, a single-pulse energy of 1.51 μJ, and a stable pulse train.