Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
oleh: Sandip Mondal, V. Venkataraman
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2019-05-01 |
Deskripsi
Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.