Temperature Dependent Excitonic Transition Energy and Enhanced Electron-Phonon Coupling in Layered Ternary SnS<sub>2-x</sub>Se<sub>x</sub> Semiconductors with Fully Tunable Stoichiometry
oleh: Der-Yuh Lin, Hung-Pin Hsu, Chi-Feng Tsai, Cheng-Wen Wang, Yu-Tai Shih
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2021-04-01 |
Deskripsi
In this study, a series of SnS<sub>2-x</sub>Se<sub>x</sub> (0 ≤ x ≤ 2) layered semiconductors were grown by the chemical–vapor transport method. The crystal structural and material phase of SnS<sub>2-x</sub>Se<sub>x</sub> layered van der Waals crystals was characterized by X-ray diffraction measurements and Raman spectroscopy. The temperature dependence of the spectral features in the vicinity of the direct band edge excitonic transitions of the layered SnS<sub>2-x</sub>Se<sub>x</sub> compounds was measured in the temperature range of 20–300 K using the piezoreflectance (PzR) technique. The near band-edge excitonic transition energies of SnS<sub>2-x</sub>Se<sub>x</sub> were determined from a detailed line-shape fit of the PzR spectra. The PzR characterization has shown that the excitonic transitions were continuously tunable with the ratio of S and Se. The parameters that describe the temperature variation of the energies of the excitonic transitions are evaluated and discussed.