Ferroelectricity of HfZrO<sub>2</sub> in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
oleh: Min Hung Lee, Y.-T. Wei, C. Liu, J.-J. Huang, Ming Tang, Yu-Lun Chueh, K.-Y. Chu, Miin-Jang Chen, Heng-Yuan Lee, Yu-Sheng Chen, Li-Heng Lee, Ming-Jinn Tsai
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2015-01-01 |
Deskripsi
The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO<sub>2</sub> (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of I<sub>DS</sub>. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.