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Oxygen vacancies (<i>V</i>_o) can significantly degrade the electrical properties of indium oxide (In₂O₃) thin films, thus limiting their application in the field of ultraviolet detection. In this work, the <i>V</i>_o is effectively suppressed by adjusting the Trimethylindium (TMIn) flow rate (<i>f</i>_TMIn). In addition, with the reduction of the <i>f</i>_TMIn, the background carrier concentration and the roughness of the film decrease gradually. And a smooth In₂O₃ thin film with roughness of 0.44 nm is obtained when the <i>f</i>_TMIn is 5 sccm. The MSM photodetectors (PDs) are constructed based on In₂O₃ thin films with different f_TMIn to investigate the opto-electric characteristics of the films. The dark current of the PDs is significantly reduced by five orders from 100 mA to 0.28 μA with the reduction of the <i>f</i>_TMIn from 50 sccm to 5 sccm. In addition, the photo response capacity of PDs is dramatically enhanced. The photo-to-dark current ratio (PDCR) increases from 0 to 2589. Finally, the PD with the <i>f</i>_TMIn of 5 sccm possesses a record-high responsivity of 2.53 × 10³ AW⁻¹, a high detectivity of 5.43 × 10⁷ Jones and a high EQE of 9383 × 100%. Our work provides an important reference for the fabrication of high-sensitivity UV PDs.