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Nonlinear optical materials, especially two-dimensional materials, are anticipated to reveal broadband optical nonlinearity for future miniaturized photonic applications. Herein, we report a physical vapor deposition method to produce β-In _2 Se _3 thin film and investigate the broadband nonlinear absorption ( β ) and refraction (n _2 ) characteristics. The β-In _2 Se _3 semiconductor shows an excellent optical nonlinearity with large β in 10 ^2 cm GW ^−1 scale and n _2 in 10 ^−12 cm ^2 W ^−1 scale from visible to NIR wavelengths, which are superior to those of metal carbides and nitrides (MXenes) and metal-organic frameworks. This excellent optical nonlinearity makes β-In _2 Se _3 a promising candidate for advanced nanophotonic devices and beyond.