SnO<sub>2</sub>-Pd as a Gate Material for the Capacitor Type Gas Sensor
oleh: Nikolay Samotaev, Konstantin Oblov, Arthur Litvinov, Maya Etrekova
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2019-06-01 |
Deskripsi
The article describes the result of the use SnO<sub>2</sub>-Pd thin films as a gate for structure measured ppb range of NO<sub>2</sub> gas by the capacitive method. The technological aspects of fabrication SnO<sub>2</sub>-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO<sub>2</sub>-Pd material allows improvement in sensitivity of NO<sub>2</sub> by an order of magnitude compare the classical Pd based gate field effect sensors.