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A horn-shaped metal-clad InGaAsP nano-cavity with sloped sidewalls is proposed as a platform for nanoscale light sources. The nano-cavity’s physical dimensions are 350 × 350 × 350 nm3, and its mode volume is 0.5 (λ0/n)3. In our numerical simulations and quantitative analysis, we have shown that the sloped sidewalls reduce metallic absorption and improve resonant mode confinement; and adjusting their slope from 0 to 16° increased the Q factor from 150 to 900 and laser modulation 3dB bandwidth from 4.3 to 36 GHz. The lasing threshold current was expected to be 35 μA at 16°. In a simulated feasibility study, we demonstrate 60 Gbps modulated laser signal (5 fJ/bit), producing 20 μW output power at the 1.5 μm wavelength with injection current 100 μA, as an implementation of horn-shaped nano-cavity platform to the low power and ultra-fast on-chip nano-laser.