Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> Capacitor
oleh: Tsung-Kuei Kang, Yu-Yu Lin, Han-Wen Liu, Che-Li Lin, Po-Jui Chang, Ming-Cheng Kao, Hone-Zern Chen
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2021-09-01 |
Deskripsi
By a sol–gel method, a BiFeO<sub>3</sub> (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO<sub>3</sub> capacitor on I<sub>DS</sub>-V<sub>GS</sub> hysteresis in the BFO TFT is 0.1–0.2 V. Because dV<sub>int</sub>/dV<sub>GS</sub> > 1 is obtained at a wide range of V<sub>GS</sub>, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.