Selective phase growth and precise-layer control in MoTe2
oleh: James P. Fraser, Liudvika Masaityte, Jingyi Zhang, Stacey Laing, Juan Carlos Moreno-López, Adam F. McKenzie, Jessica C. McGlynn, Vishal Panchal, Duncan Graham, Olga Kazakova, Thomas Pichler, Donald A. MacLaren, David A. J. Moran, Alexey Y. Ganin
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2020-07-01 |
Deskripsi
The polymorphism of MoTe2 can be used to realize planar metallic/semiconducting homojunctions in 2D devices, greatly reducing the contact resistance. Here, the simultaneous growth of both phases is achieved on the same substrate by single-step chemical vapor deposition and seeding layer engineering.