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To suppress severe self-heating under high power density, we herein demonstrate top-gate nano-membrane β-gallium oxide (β-Ga₂O₃) field effect transistors on a high thermal conductivity diamond substrate. The devices exhibit enhanced performance, with a record high maximum drain current of 980 mA/mm for top-gate β-Ga₂O₃ field effect transistors and 60% less temperature increase from reduced self-heating, compared to the device on a sapphire substrate operating under identical power density. With improved heat dissipation, β-Ga₂O₃ field effect transistors on a diamond substrate are validated using an ultrafast high-resolution thermoreflectance imaging technique, Raman thermography, and thermal simulations.