All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
oleh: Maheswari Sivan, Yida Li, Hasita Veluri, Yunshan Zhao, Baoshan Tang, Xinghua Wang, Evgeny Zamburg, Jin Feng Leong, Jessie Xuhua Niu, Umesh Chand, Aaron Voon-Yew Thean
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2019-11-01 |
Deskripsi
Designing efficient, scalable and low-thermal-budget 2D Materials for 3D integration remains a challenge. Here, the authors report the development of a hybrid-(solution-processed-exfoliated) integration of 2D Material based 1T1R which uses a multilayer WSe2 p-FET and a multilayer printed WSe2 RRAM.